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NCE2025S Datasheet, NCE Power Semiconductor

NCE2025S mosfet equivalent, n-channel enhancement mode power mosfet.

NCE2025S Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 395.27KB)

NCE2025S Datasheet
NCE2025S
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 395.27KB)

NCE2025S Datasheet

Features and benefits


*VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and.

Application

General Features
*VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V
* High density cell desig.

Description

The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
*VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V

Image gallery

NCE2025S Page 1 NCE2025S Page 2 NCE2025S Page 3

TAGS

NCE2025S
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

Manufacturer


NCE Power Semiconductor

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